Third-generation semiconductors have recently attracted much attention.
Companies such as Xiaomi and Transsion have seized the third-generation semiconductor materials in the fast charging field; in the capital market, the third-generation semiconductor upstream and downstream companies-Taiwan Base, Antai Technology, Roshow Technology, Haite High-tech, etc. Be active. At the policy level, there is news that the domestic semiconductor industry will be developed in a coordinated manner, and industry development support will also be further increased, with particular emphasis on third-generation semiconductors.
In the opinion of industry experts such as Yu Kunshan, secretary general of the third-generation semiconductor industry technology innovation strategic alliance, vigorously developing third-generation semiconductors is of great significance in supporting carbon peaks and carbon neutrality.
The third-generation semiconductors are wide-bandgap semiconductors. They are represented by silicon carbide and gallium nitride. They have high-frequency, high-efficiency, high-power, high-voltage resistance, high-temperature resistance, and strong radiation resistance. They support the new generation of mobile communications, Key core materials and Electronic components for independent innovation, development, transformation and upgrading of industries such as new energy vehicles, high-speed rail trains, and energy Internet.
Cai Wei, a member of the China Electric Vehicles Association and a professor at Harbin University of Science and Technology, analyzed that the inherent characteristics of the third-generation semiconductor power chips and devices determine that they are The advantages of high-efficiency conversion of electrical energy in the fields of chemical transportation, industrial power supply, and civil household appliances.
“Electrified land, sea and air transportation represented by new energy vehicles and emerging industries represented by intelligent robots, unmanned aircraft, and CNC machine tools urgently need third-generation power semiconductors with high frequency, efficiency and temperature resistance.” Cai Wei said .
Qiu Yufeng, former dean of the National Grid Global Energy Internet Research Institute, analyzed that the current power grids used in new energy power generation and power transmission and transformation links are basically silicon-based devices, and the parameter performance of silicon-based devices is close to their materials. As a result, it is unable to shoulder the important task of supporting large-scale clean energy production, transmission, absorption and absorption.
“Power semiconductor devices made of silicon carbide materials, with their excellent characteristics of high voltage, high frequency, high temperature and high speed, can greatly increase the energy density of various power electronic equipment required for the construction and operation of new power systems that support clean energy as the main body, and reduce costs. Cost, enhance reliability and applicability, improve power conversion efficiency, and reduce losses.” Qiu Yufeng said.
How to better develop third-generation semiconductors to help achieve the goal of carbon peak and carbon neutrality?
Yu Kunshan believes that the first step is to realize the industrialization of key materials, core chips and modules, optimize the layout of the industry, and pass demonstrations and large-scale applications.
Specifically, in response to the needs of third-generation power semiconductor devices (the two major material systems of silicon carbide and gallium nitride), accelerate the realization of the independent and controllable development of the third-generation semiconductor industry chain, including: achieving high-performance 6-inch, 8 Mass production of inch silicon carbide single crystal substrates and epitaxial materials and its power devices, mass production of 6-inch and 8-inch silicon-based gallium nitride epitaxial materials and their power devices, mass production of high-performance packaged devices and modules, single crystal Localization of core testing instruments and equipment such as substrate growth, processing, chip technology, packaging, and testing.
In addition, Yu Kunshan suggested that while encouraging local governments and social capital to actively participate in the industrialization of the third generation of semiconductors, it is necessary to take into account the high risk, high investment, high technology threshold, and long cycle characteristics of the semiconductor industry itself, and orderly Promote industrial layout.
“In regions with a good semiconductor industry foundation, strong financial strength, and abundant talent reserves, we will take the lead in arranging upstream and midstream industries by means of industrial chain aggregation, in order to quickly realize the industrialization of core materials and chips, and then use mature teams and enterprises as the The core is mass production and expansion on a larger scale, and finally the mature technology and products of the third-generation semiconductor will be promoted and applied to all walks of life.” Yu Kunshan said.
Cai Wei also emphasized that it is necessary to strengthen the construction of the industrial chain, from substrates, epitaxy, chips to packaging, controller design and manufacturing, and applications to achieve a low-carbon or even zero-carbon strategy for the entire life cycle. “The independent controllability of raw materials, chips and devices is the cornerstone of the healthy development of the third-generation wide-bandgap power semiconductor industry, and it is also the guarantee for the implementation of the dual-carbon strategic goal of the entire industry chain.” He said.
On this basis, Qiu Yufeng suggested that the combination of R&D and applications should be promoted in downstream new energy vehicles, photovoltaic inverters, charging piles, data centers, smart factories, white goods, consumer electronics, logistics, energy Internet and other fields Carry out application demonstration. Through application demonstrations, help equipment manufacturers familiarize themselves with third-generation semiconductor devices, accelerate product iteration, open up market application demand channels as soon as possible, and accelerate product maturity.